A photolithography mask for optically transferring a pattern formed in the mask
onto a substrate and for negating optical proximity effects. The mask includes
a plurality of resolvable features to be printed on the substrate, and at least
one non-resolvable optical proximity correction feature disposed between two of
the resolvable features to be printed, where the non-resolvable optical proximity
correction feature has a transmission coefficient in the range of greater than
0% to less than 100%.