The present invention relates to a low dielectric substance essential for a next
generating electrical device such as a semiconductor device having high performance
and high density, and particularly to a process for preparing a low dielectric
organosilicate polymer, a hydrolysis condensation product of a carbon-bridged oligomer;
a process for manufacturing an insulating film using an organosilicate polymer
prepared by the process; and an electrical device comprising an insulating film
prepared by the process. The organosilicate polymer prepared according the process
of the present invention is thermally stable, and has good film-forming prosperities,
excellent mechanical strength and crack resistance, and the film manufactured therefrom
has excellent insulating properties, film uniformity, dielectric properties, crack
resistance, and mechanical strength.