A ferroelectric capacitor has a top electrode, a bottom electrode, a ferroelectric
body disposed between the top and bottom electrodes, and a dielectric lining disposed
below the top electrode and above the bottom electrode, protecting the sides of
the ferroelectric body. The ferroelectric body can be formed by chemical-mechanical
polishing of a ferroelectric film. In a memory device, the capacitor is coupled
to a transistor. The dielectric lining protects the ferroelectric body from etching
damage during the fabrication process, obviating the need for repeated annealing
to repair such damage, thereby avoiding the alteration of transistor characteristics
that would be caused by such annealing.