Provided is a semiconductor laser device in which at least an n-type first
cladding layer, an active layer and a p-type second cladding layer are formed on
or above an n-type semiconductor substrate. An n-type current block layer having
a stripe-shaped groove-like removed portion is formed on the second cladding layer
and at least a p-type third cladding layer is formed on the current block layer
including the stripe-shaped removed portion. The second cladding layer has a p-type
C impurity concentration of 31017 cm-3 to 21018 cm-3.
