Problems in reliability and cross-talk of MRAM, which are intrinsically ascribable to the structure thereof, are solved at the same time. In a magnetic storage device (1) having write word lines (11) and bit lines (12) formed so as to cross while keeping a predetermined space therebetween, and provided with a TMR element (13) configured so as to sandwich a tunnel insulating layer (303) with a magnetization fixed layer (302) and a storage layer (304) comprising a ferromagnetic layer, in each of thus-formed intersectional region, and there is provided a semiconductor region (22) in which two read transistors (24, 24), which serve as read transistors, are formed, and which comprises a first region (22a) obliquely crosses a projected region of the write word line (11); a second region (22b) formed in parallel with the bit line (12) so as to be continued from one end of the first region; and a third region (22c) formed in parallel with the bit line (12) and so as to be continued from the other end of the first region (22a).