A reading circuit for reading information stored in a memory cell includes a current supply circuit for supplying a current to a bit line connected to the memory cell; a comparison circuit for comparing a potential of the bit line supplied with the current by the current supply circuit with a reference potential so as to output the information stored in the memory cell; a disconnection circuit for electrically disconnecting the comparison circuit and the memory cell from each other under a prescribed condition; a charge circuit for charging the bit line, the charge circuit stopping charging of the bit line when the potential of the bit line exceeds a prescribed potential; and a discharge circuit for discharging the bit line when the potential of the bit line exceeds the prescribed potential.