A hemispherical grain (HSG) formation process for enlarging the surface area
of
a capacitor electrode, wherein stable, defect-free HSG, having outstanding selectivity,
is formed. An amorphous silicon layer, which constitutes a capacitor electrode,
is formed on an Si wafer, on which is formed a silicon-based dielectric layer,
which constitutes an interlevel dielectric layer. An HSG layer, in which there
exists practically no defects, is formed on the amorphous silicon layer at a crystal
nuclei formation temperature of under 620 C. Further, in accordance with
properly controlling the crystal nuclei formation temperature, and the flow rate
of monosilane (SiH4), which is supplied for crystal nuclei formation,
it is possible to furnish selectivity such that HSG nuclei are formed solely on
the amorphous silicon layer, without being formed on a silicon-based dielectric layer.