The invention is directed to reduction of a pattern size of a driving transistor of an emissive element and an improvement of an aperture ratio of a pixel. A second active layer of a driving TFT is formed of a two laminated polysilicon layers. The upper polysilicon layer is formed at the same time when a polysilicon layer forming a first active layer of a pixel selecting TFT is formed, and has a same thickness as that of the first active layer. Therefore, the second active layer is formed thicker by a film thickness of the lower polysilicon layer. An average crystal grain size of the second active layer is smaller than an average crystal grain size of the first active layer. Therefore, a carrier mobility of the driving TFT is lower than a carrier mobility of the pixel selecting TFT. This can shorten a channel length of the driving TFT.