A semiconductor device for individually controlling an element to be driven,
such
as an electroluminescence element, includes a switching TFT which operates when
a selection signal is applied to its gate and which also captures a data signal,
and an element-driving TFT in which its drain is connected with a drive power source,
its source is connected with the element to be driven, gate receives a data signal
supplied from the switching TFT, for controlling electric power supplied from the
drive power source to the element to be driven. The semiconductor device further
includes a storage capacitor having a first electrode connected with the switching
TFT and with the gate of the element-driving TFT and a second electrode connected
between the source of the element-driving TFT and the element to be driven, for
holding the gate-source voltage of the element-driving TFT in accordance with the
data signal, and a switching element for controlling the potential of the second
electrode of the storage capacitor. With such a configuration, all the above-described
switches can be formed by TFTs of the same conductivity type and reliable supply
of electric power to the element to be driven can be assured.