In a tunneling magneto-resistance element, first and second free magnetic layers
have a magnetization direction according to storage data. The first and second
magnetic layers are arranged with an intermediate layer interposed therebetween.
The intermediate layer is formed from a non-magnetic conductor. In data write operation,
a data write current having a direction according to a write data level is supplied
to the intermediate layer. A magnetic field generated by the current flowing through
the intermediate layer magnetizes the first and second free magnetic layers with
a looped manner.