A method of manufacturing a semiconductor with a storage capacitor having sufficient memory capacity while requiring a minimum area is provided. The method includes steps for manufacturing a storage capacitor of a pixel region that has a structure of a first storage capacitor and a second storage capacitor stacked on top of the other and connected in parallel with each other. The method further includes steps for forming the first storage capacitor having a first capacitance electrode formed in the same layer as a drain region, a first dielectric, and a second capacitance electrode formed in the same layer as a gate wiring. Still further, the method includes steps for forming the second storage capacitor including the second capacitance electrode, a second dielectric, and a third capacitance electrode formed in the same layer as a light-shielding film.