A continuous contact hole is formed in an insulation layer that separates a storage capacitor from a switching transistor. All except a section of the contact hole is filled with poly-Si. A conductive, oxidizable interlayer and a conductive oxygen barrier layer are deposited on the Poly-Si in the remaining section of the contact hole such that the interlayer is completely surrounded by the poly-Si of the contact hole, the insulation layer, and the barrier layer.