Methods for driving a wordline in a semiconductor memory device are provided. Pursuant to these methods, a wordline drive signal is generated that may be used to activate a first wordline in response to a drive signal that is derived from a row address signal. A wordline reset signal for deactivating the first wordline may then be generated in response to the drive signal derived from the row address signal, a refresh wordline signal established during a refresh operation, and a mode register set wordline signal provided from a mode register. Semiconductor memory devices that implement these methods are also disclosed.