A magnetoresistance sensor structure includes a magnetoresistance sensor having
a sensor surface plane and having a free layer. An upper antiferromagnetic layer
overlies at least a portion of the free layer, and an upper ferromagnetic layer
overlies and contacts at least a portion of the upper antiferromagnetic layer on
a contact face lying parallel to the sensor surface plane, so that the upper antiferromagnetic
layer lies between the upper ferromagnetic layer and the free layer. The magnetoresistance
sensor may be a giant magnetoresistance sensor or a tunnel magnetoresistance sensor.