Performance for a gate insulation film of an insulated gate transistor is enhanced. A depletion layer is generated in a region of a gate electrode 12 which is provided in contact with a gate insulation film 4 in an OFF state, and the depletion layer disappears or a width thereof is reduced in an ON state.

 
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> Films doped with carbon for use in integrated circuit technology

> Semiconductor device comprising a discontinuous region and/or a continuous region having trench isolation stress applied thereto
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