Disclosed is a method for fabricating a semiconductor device with an improved
tolerance to a wet cleaning process. For a contact formation such as a gate structure,
a bit line or a metal wire, a spin on glass (SOG) layer employed as an inter-layer
insulation layer becomes tolerant to the wet cleaning process by allowing even
a bottom part of the SOG layer to be densified during a curing process. The SOG
layer is subjected to the curing process after a maximum densification thickness
of the SOG layer is obtained through a partial removal of the initially formed
SOG layer or through a multiple SOG layer each with the maximum densification thickness.
After the SOG layer is cured, a self-aligned contact etching process is performed
by using a photoresist pattern singly or together with a hard mask.