The semiconductor device includes a semiconductor substrate and a multi-layer wiring portion including insulating layers and wiring layers alternately stacked one on another on a main surface of the semiconductor substrate. The resistance value of a wiring layer located on an upper side of an adjacent pair of wiring layers is lower than or equal to that of a wiring layer located on a lower side of the adjacent pair, and the resistance value of the lowermost layer is higher than that of the uppermost layer. The specific inductive capacity of an insulating layer located on an upper side of an adjacent pair of insulating layers is higher than or equal to that of an insulating layer located on a lower side of the adjacent pair, and the specific inductive capacity of the lowermost layer is lower than that of the uppermost layer.

 
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