A solid-state imaging device comprising: a semiconductor substrate having a first surface; and a plurality of light-receiving sections arranged in an array pattern on the first surface of the semiconductor substrate, the solid-state imaging device reading a stored electric charge in each of the light-receiving sections, wherein each of the light-receiving sections comprises: a first signal electric charge storage section that stores a first signal electric charge corresponding to an incident light energy; and a second signal electric charge storage section that stores at least part of an excessive electric charge, the at least part of the excessive electric charge being captured from the first signal electric charge storage section, when the electric charge stored in the first signal electric charge storage section exceeds a saturated electric charge amount of the first signal electric charge section to form the excessive electric charge.

 
Web www.patentalert.com

< Matrix array devices with flexible substrates

< Apparatus for determining temperature of an active pixel imager and correcting temperature induced variations in an imager

> Semiconductor device having a non-straight line pattern with plural interconnected arched lines

> Field effect transistor with corner diffusions for reduced leakage

~ 00226