An embodiment of the present invention is a method of fabricating a semiconductor device. The method comprises forming a film of bottom electrode material entirely over the dielectric film; etching the bottom electrode film to partially define a sidewall of each of bottom electrodes; forming a film of ferroelectric material on the remainder of the bottom electrode film and the exposed surface of the dielectric film; forming a film of top electrode material on the ferroelectric film; and etching the top electrode film, the ferroelectric film and the remainder of the bottom electrode film until the surface of the dielectric film is exposed to completely define the sidewall of each of the bottom electrodes.