A semiconductor device comprising a buried insulating film formed in a substrate; a protective film formed on the buried insulating film covering corresponding diffusion regions of a P-type MISFET and a N-type MISFET, wherein the protective film is etch resistant to a hydrofluoric acid based solution; and a wiring layer formed on the protective film and being electrically connecting the diffusion regions of the P-type MISFET and the N-type MISFET.

 
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