A chemical mechanical polishing composition comprising a soluble cerium compound at a pH above 3 and a method to selectively polish a silicon oxide overfill in preference to a silicon nitride film layer in a single step during the manufacture of integrated circuits and semiconductors.

 
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< Aqueous dispersion for chemical mechanical polishing, chemical mechanical polishing process, production process of semiconductor device and material for preparing an aqueous dispersion for chemical mechanical polishing

< Exhaust gas purifying catalyst compound, catalyst comprising said compound and method for preparing the compound

> Desiccant entrained polymer

> Sinterable structures and method
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