A method of forming semiconductor device treating a surface of a substrate to produce a discontinuous growth of a material on the surface through rapid thermal oxidation of the substrate surface at a temperature of less than about 700 C.

 
Web www.patentalert.com

< Precursor source mixtures

< Systems and methods for forming metal-doped alumina

> Deposition method of insulating layers having low dielectric constant of semiconductor devices

> Post chemical mechanical polishing cleaning solution for 2.45T CoFeNi structures of thin film magnetic heads
~ 00231