Techniques for improved semiconductor device performance are provided.
In one aspect, a semiconductor device is provided. The device comprises at least
one free magnetic layer, and a magnetic amplifier interacting with the free magnetic
layer comprising two or more magnetic layers with at least one nonmagnetic layer
therebetween. The nonmagnetic layer may be configured to provide parallel exchange
coupling J of the magnetic layers in a range of
##EQU1##
the magnetic layers having a long axis and a short axis, wherein t is a thickness
of each magnetic layer, Ms is magnetization, ny is a demagnetizing
factor defined along the short axis of the magnetic layers and b is a diameter
along a short axis of the magnetic layers. A method for switching a semiconductor
device having at least one free magnetic layer is also provided.
