Process for laminating a dielectric layer onto a semiconductor

This invention relates to processes useful for fabricating electronic devices, more particularly to a process for laminating a layer of dielectric material onto a semiconductor.

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< Composite dielectric forming methods and composite dielectrics

> Silicon oxide gap-filling process

> Method for forming a multi-layered structure of a semiconductor device and methods for forming a capacitor and a gate insulation layer using the multi-layered structure

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