An electronic device is provided using wiring comprising aluminum to prevent hillock or whisker from generating, wherein the wiring contains oxygen atoms at a concentration of 810¹⁸ atomscm^-3 or less, carbon atoms at a concentration of 510¹⁸ atomscm^-3 or less, and nitrogen atoms at a concentration of 710¹⁷ atomscm^-3 or less; furthermore, a silicon nitride film is formed on the aluminum gate, and an anodic oxide film is formed on the side planes thereof.