Provided is a method of manufacturing a semiconductor device, comprising preparing a base comprising a semiconductor substrate having a device surface side, a p-type semiconductor layer formed on the device surface side of the semiconductor substrate, a n-type semiconductor layer which is formed on the device surface side of the semiconductor substrate and forms a p-n junction together with the p-type semiconductor layer, and wirings formed above the semiconductor substrate and electrically connected to each other via the p-n junction, applying a chemical solution containing electrolytes to a device surface of the base, the wirings being exposed at the device surface of the base, and applying a liquid selected from the group consisting of anode water, oxidizing gas-dissolved water, radical-containing water, cathode water, reducing gas-dissolved water and an organic substance-adding solution to the device surface of the base.