The invention relates to a material including carbon, oxygen, silicon and hydrogen and having a dielectric constant of from about 2.1 to about 3.0 where an FTIR scan of the material includes at least two major peaks signifying Si—CH3 bonding. The invention further relates to a material which has a variable dielectric constant through the thickness of the material. Another aspect of the invention is the method of making the material.

 
Web www.patentalert.com

< Strained-semiconductor-on-insulator finFET device structures

< Dendrite growth control circuit

> Layout of a flash memory having symmetric select transistors

> MOS device and process for manufacturing MOS devices using dual-polysilicon layer technology

~ 00237