A ring-shaped P+ type diffusion region is formed on the top surface
of a P type substrate in such a way as to surround a single internal circuit region.
A shunt wiring is formed in an area including directly above the P+
type diffusion region on the P type substrate. The shunt wiring is connected to
the P+ type diffusion region by a plurality of contacts. The shunt wiring
is provided with an annular ring portion surrounding the internal circuit region.
A meander inductor led out from the ring portion and the one end of the meander
inductor is connected to a ground potential wiring. A resonance circuit is formed
by a parasitic capacitor and the inductance of the shunt wiring. The parasitic
capacitor is formed between the shunt wiring and the P+ type diffusion
region on the P type substrate.