An integrated Schottky diode and method of manufacture of such a diode is disclosed. In a first aspect, a Schottky diode comprises a semiconductor substrate. The semiconductor substrate includes an epitaxial layer (EPI) on the substrate region. The diode includes a plurality of guard rings in the EPI layer and a plurality of oxidized slots. Finally, the diode includes metal within the plurality of slots to form a Buried Power Buss. A portion of the metal is completely oxide isolated from the other elements of the diode. In a second aspect, a method for manufacturing a Schottky diode comprises providing a substrate region, A buried N+ region providing an epitaxial (EPI) layer. The method also includes providing a plurality of guard rings in the EPI layer and providing a plurality of slots in the semiconductor substrate that is in contact with the EPI layer and the substrate region. The method further includes a plurality of oxidizing the slots and providing metal within the plurality of slots to form a Buried Power Buss structure. A portion of the metal is completely oxide isolated from the other elements of the diode. Accordingly, the system and method in accordance with the present invention a Schottky diode is provided that has low forward drop, low leakage at low and high voltages, and has a high reverse breakdown voltage.