A semiconductor device includes a MOS transistor, interlayer dielectric film, first and second high-dielectric-constant films, and first and second conductive films. The MOS transistor is formed on a semiconductor substrate. The interlayer dielectric film is formed on the semiconductor substrate so as to cover the MOS transistor. The first high-dielectric-constant film is formed on the interlayer dielectric film and has an opening portion that reaches the interlayer dielectric film. The first conductive film contains a metal element and is formed to be partially embedded in the opening portion. The second high-dielectric-constant film is formed on the first conductive film. The second conductive film is formed on the second high-dielectric-constant film.