A method for forming a copper bump for flip chip bonding having improved oxidation resistance and thermal stability including providing a copper column having a thickness of at least about 40 microns overlying a metallurgy including an uppermost copper metal layer and a lowermost titanium layer the lowermost titanium layer in contact with an exposed copper bonding pad portion surrounded by a passivation layer; and, selectively depositing at least one protective metal layer over the copper column according to an electrolytic deposition process.

 
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< Wafer stacking with anisotropic conductive adhesive

< Attenuated total reflection spectroscopic analysis of organic additives in metal plating solutions

> Selective capping of copper wiring

> Wiring substrate, method of producing the same, and electronic device using the same

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