A nonvolatile ferroelectric memory device having a multi control function can determine a plurality of cell data in a reference timing strobe interval by setting a plurality of sensing voltage levels when cell data are sensed in a sensing critical voltage. In a read mode, a plurality of read data applied from a cell array block are stored in a timing data register array unit through a common data bus unit. In a write mode, a plurality of read data stored in the timing data register array unit or input data applied from a timing data buffer unit are stored in a cell array block through the common data bus unit. Here, since a plurality of sensing voltage levels are set in cell data, a plurality of sensed data bits can be stored in one cell.