The present invention provides a magnetic head having improved characteristics,
using a magnetoresistive device in which current flows across the film plane such
as a TMR device. In a first magnetic head of the present invention, when the area
of a non-magnetic layer is defined as a device cross-section area, and the area
of a yoke is defined as a yoke area, viewed along the direction perpendicular to
the surface of the substrate over which the yoke and the magnetoresistive device
are formed, then the device cross-section area is not less than 30% of the yoke
area, so that a resistance increase of the device cross-section area is suppressed.
In a second magnetic head of the present invention, a magnetoresistive device is
formed on a substrate, and a yoke is provided above a non-magnetic layer constituting
the device. In a third magnetic head of the present invention, the free layer of
the magnetoresistive device includes at least two magnetic films and at least one
non-magnetic film that are laminated alternately, and the thickness of the non-magnetic
layer is not less than 2 nm and not more than 10 nm, and magnetostatic coupling
is dominant. In a fourth magnetic head of the present invention, a magnetic gap
is provided adjacent to the magnetoresistive device and the magnetic films are
coupled antiferromagnetically.