Cobalt-nickel oxide films of nominal 100 nm thickness, and resistivity as low as 0.06 cm have been deposited by spin-casting from both aqueous and organic precursor solutions followed by annealing at 450 C. in air. An increase in film resistivity was found upon substitution of other cations (e.g., Zn²⁺, Al³⁺) for Ni in the spinel structure. However, some improvement in the mechanical properties of the films resulted. On the other hand, addition of small amounts of Li decreased the resistivity. A combination of XRD, XPS, UV/Vis and Raman spectroscopy indicated that NiCo₂O₄ is the primary conducting component and that the conductivity reaches a maximum at this stoichiometry. When x0.67, NiO forms leading to an increase in resistivity; when x0.67, the oxide was all spinel but the increased Co content lowered the conductivity.