A high-voltage diode has a dopant concentration of an anode region and a cathode region optimized in terms of basic functions static blocking and conductivity. Dopant concentrations range from 110¹⁷ to 310¹⁸ dopant atoms per cm³ for the anode emitter, especially on its surface 10¹⁹ dopant atoms per cm³ or more for the cathode emitter and approximately 10¹⁶ dopant atoms per cm³ for the blocking function of an anode-side zone.