A microscopic projection or a characteristic pattern are formed in the vicinity
of a region to be processed before processing using electron beam CVD, during processing
an image of a region containing the projection or pattern formed by electron beam
CVD is captured to obtain a current position of the projection or pattern, a difference
between the position before staring and the current position is treated as a drift
amount and processing is restarted at a region that has been subjected to microscopic
adjustment of the electron irradiation region.