There is provided a ceramic member for semiconductor manufacturing equipment which is formed of an alumina-based sinter containing an yttrium-aluminum-garnet at the amount of 3 to 50 wt %, silicon oxide at the amount of not more than 0.2 wt %, preferably 0.1 wt %, and the balance substantially alumina, wherein the sinter has dielectric loss of not more than 410^-4 particularly 2.510^-4 or less in the frequency range of 10 MHz to 5 GHz. Such a member may be formed of a ceramic sinter including an aluminum phase having mean crystal grain size in a range of 2 to 10 m and a yttrium-aluminum-garnet phase having a mean crystal grain size in a range of 1.5 to 5 m, wherein the ratio of the mean crystal grain size of the alumina phase to that of the yttrium-aluminum-garnet phase is larger than 1 and smaller than 7.