A magnetic random access memory according to examples of the present invention comprises a magneto resistive element MTJ, and current source circuits I1, I2 and I3 which give a bias current/voltage to the magneto resistive element MTJ when data in the magneto resistive element MTJ is read, wherein a value of the bias current/voltage changes depending on temperature without depending on a power supply potential.

 
Web www.patentalert.com

< Non-volatile RAM cell and array using nanotube switch position for information state

< Magneto-resistance effect element, magnetic memory and magnetic head

> Thin-film magnetic memory device with memory cells having magnetic tunnel junction

> Method of manufacturing semiconductor device, integrated circuit, electro-optical device, and electronic apparatus
~ 00252