An insulated gate field effect transistor (FET) of a particular conductivity type, has as a gate electrode, a non-semiconductive material with a work function that approximates the work function of a semiconductive material that is doped to be of the same conductivity type. In a particular embodiment, an integrated circuit includes an n-channel FET having a tantalum-based gate electrode with a work function approximately the same as n-doped polysilicon, and a p-channel FET has a tantalum nitride-based gate electrode with a work function approximately the same as p-doped polysilicon.