A method and apparatus for depositing a dielectric material at a rate of at least 3000 Angstroms per minute on a large area substrate that has a surface area of at least about 0.35 square meters is provided. In one embodiment, the dielectric material is silicon oxide. Also provided is a large area substrate having a layer of dielectric material deposited by a process yielding a deposition rate in excess of about 3000 Angstroms per minute and a processing chamber for fabricating the same.