A semiconductor device includes an alignment mark arranged on a surface, and including a high reflectance portion and a flat low reflectance portion; and a first silicon oxide film formed internally and provided with a plurality of first embedded portions filled with a material different from a material of portions around the embedded portions. The first embedded portions are formed in at least a portion of a region avoiding a portion shaded by projecting the high reflectance portion onto the silicon oxide film.

 
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