A nonvolatile magnetic memory device having a nonvolatile magnetic memory array comprising write-in word line(s), bit lines and tunnel magnetoresistance devices, wherein when data is written into the tunnel magnetoresistance device, a current I(m)_RWL is passed through the m-th-place write-in word line, a current g(0)I(n)_BL is passed through the n-th-place bit line, and at the same time, a current g(k)I(n)_BL is passed through the q-th-place bit line (q=n+k, k is 1, 2, . . . , and the total number of the lines is K), and a spatial FIR filter assuming magnetic fields, which are supposed to be formed in the n-th-place bit line and the bit lines that are K in number by the current I(n)_BL, to be discrete pulse response and assuming the coefficients g(0) and g(k) to be tap-gains is constituted of the n-th-place bit line and the bit lines that are K in number.