A vertical geometry light emitting diode is disclosed that is capable of emitting light in the red, green, blue, violet and ultraviolet portions of the electromagnetic spectrum. The light emitting diode includes a conductive silicon carbide substrate, an InGaN quantum well, a conductive buffer layer between the substrate and the quantum well, a respective undoped gallium nitride layer on each surface of the quantum well, and ohmic contacts in a vertical geometry orientation.

 
Web www.patentalert.com

< Method for detecting forensic evidence

< LED lamp

> Device selection circuitry constructed with nanotube technology

> Semiconductor base and its manufacturing method, and semiconductor crystal manufacturing method

~ 00256