The active region of a long-wavelength light emitting device is made by providing
an organometallic vapor phase epitaxy (OMVPE) reactor, placing a substrate wafer
capable of supporting growth of indium gallium arsenide nitride in the reactor,
supplying a Group III-V precursor mixture comprising an arsenic precursor, a nitrogen
precursor, a gallium precursor, an indium precursor and a carrier gas to the reactor
and pressurizing the reactor to a sub-atmospheric elevated growth pressure no higher
than that at which a layer of indium gallium arsenide layer having a nitrogen fraction
commensurate with light emission at a wavelength longer than 1.2 m is deposited
over the substrate wafer.