The invention relates to an image sensor device comprising a substrate, formed
in CMOS technology, in particular, with an integrated semiconductor structure (ASIC)
and, arranged above that, an optically active thin-film structure comprising in
each case at least one layer made of doped and undoped amorphous silicon, spatially
adjacent pixels in each case being formed in the horizontal plane, which pixels
each have an optoelectronic transducer for converting incident light into an electric
current proportional to the incident quantity of light, and also a charge store
assigned to the optoelectronic transducer, the charge state of which charge store
can be varied in a manner dependent on the light incident on the assigned optoelectronic
transducer. Taking this as a departure point, the invention is based on the object
of further developing an image sensor device of the stated type to the effect of
avoiding image distortions in the case of moving objects, which is achieved according
to the invention by virtue of the fact that the charge store is a capacitor (Cint),
in which the photocurrent output by the optoelectronic transducer can be integrated
during a predetermined measurement duration, and that a switching means (Tstop)
that can be driven by a common control device is provided in each pixel, which
switching means can be driven jointly for all the pixels of the image sensor device.
