A method of manufacturing a ferroelectric capacitor. In this method, a lower
electrode
is formed on a base at first. A ferroelectric film which includes a PZTN complex
oxide including lead, zirconium, titanium, and niobium on the lower electrode is
formed, and then an upper electrode is formed on the ferroelectric film. A protective
film is then formed to cover the lower electrode, the ferroelectric film, and the
upper electrode, and heat treatment for crystallizing the PZTN complex oxide is
performed at least after forming the protective film.