A method for manufacturing a compound semiconductor optoelectronic device is proposed. There are steps of: forming an optoelectronic device epitaxial wafer, the optoelectronic device epitaxial wafer containing a V-shaped pit due to threading dislocation; forming an insulated isolation material in the V-shaped pit of the optoelectronic device epitaxial wafer; and forming an electrode layer on the optoelectronic device epitaxial wafer having the insulated isolation material in the V-shaped pit for completing the optoelectronic device.