A means of neutralizing the excess charge on workpieces, such as semiconductor
wafers, that results from ion-implantation processes, wherein the excess positive
charge on a small area of the workpiece surface is locally sensed, and in response,
an appropriate dose of charge-compensating electrons is delivered from an electron
emission source to the area of excess charge on the workpiece. A charge-sensing
probe and a voltage-controlled electron generator array are configurationally and
operatively coupled in a closed feedback loop, and are made to scan the surface
of the workpiece, in close but non-contacting proximity to the workpiece. Arrays
of charge-sensing probes and electron generator arrays can be configured for rapid
coverage of the implanted areas of the workpiece. The present invention has significant
advantages over other methods, such as plasma and electron showers and plasma flood
systems, for neutralizing the excess charge due to ion implantation.