A method for making high quality InGaAsN semiconductor devices is presented. The method allows the making of high quality InGaAsN semiconductor devices using a single MOCVD reactor while avoiding aluminum contamination.
Web www.patentalert.com
< Method for producing a long wavelength indium gallium arsenide nitride(InGaAsN) active region
< Methods for annealing a substrate and article produced by such methods
> Long wavelength vertical cavity surface emitting laser
> Npn double heterostructure bipolar transistor with ingaasn base region
HOME | NEW USER | LOGIN | SUBSCRIPTIONS | SEARCH | GUESTBOOK | CONTACT