Integrated circuit fabrication techniques are provided which allow non-horizontal/non-vertical wires to traverse the entire chip surface, rather than just the corners as in the conventional Manhattan geometry, while interconnecting circuit points. This is achieved by employing a variable rotational assignment methodology with respect to the interconnect layers or levels during the IC fabrication operation. These techniques thus eliminate the litho step problem, reduce interconnect distances and lessen the influence of capacitance interaction between interconnect wires.

 
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< Electronic device sealed under vacuum containing a getter and method of operation

< Integrated circuit package with low modulus layer and capacitor/interposer

> Semiconductor interconnect having compliant conductive contacts

> Group III nitride compound semiconductor device

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